Transistor

Model / MPN: SI1922EDH-T1-GE3 | NSN: 5961-01-650-9691

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Product Details

NATO Stock Number

5961-01-650-9691

Sold in multiples of

0 EA

DEMIL

End Application

V-22 aircraft

Mounting Facility Quantity

Mounting Method

Terminal

Features Provided

Rohs directive compliance

Voltage Rating In Volts Per Characteristic

20.0 breakdown voltage, drain-to-source, with all other terminals short-circuited to source and 8.0 breakdown voltage, gate-to-source, with all other terminals short-circuited to source and 1.0 gate to source threshold voltage

Current Rating Per Characteristic

1.3 amperes drain current

Power Rating Per Characteristic

1.25 watts total power dissipation

Maximum Operating Tempurature Per Measurement Point

150.0 degrees celsius ambient air

Part Name Assigned By Controlling Agency

N-channel mosfet transistor

Terminal Type And Quantity

6 pin

SI1922EDH Series Parts

SI1922EDH-T1-GE3

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Transistor

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SI1922EDH-T1-GE3 Cross Reference