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Unitized Semiconductor Devices

Model / MPN: 77A112799P1 | NSN: 5961-01-372-8127
ITAR Registered seal

Two or more discrete semiconductor devices such as diod (s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see microcircuit (as modified). Excludes network (as modified) ; absorber, overvoltage; semiconductor device set; and semiconductor device assembly. Do not use if more specific name applies.

Product Details
NATO Stock Number
5961-01-372-8127
Sold in multiples of
EA
DEMIL
NO
Inclosure Material
Plastic
Overall Length
0.375 inches
Overall Width
0.340 inches
Component Name And Quantity
4 transistor
Mounting Method
Terminal
Features Provided
Electrostatic sensitive
Semiconductor Material
Silicon all transistor
Voltage Rating In Volts Per Characteristic
-60.0 breakdown voltage, collector-to-base, emitter open 2nd transistor and -4.0 breakdown voltage, emitter-to-base, collector open 2nd transistor and -60.0 breakdown voltage, collector-to-emitter, base open 2nd transistor
Voltage Rating In Volts Per Characteristic
-60.0 breakdown voltage, collector-to-base, emitter open 3rd transistor and -4.0 breakdown voltage, emitter-to-base, collector open 3rd transistor and -60.0 breakdown voltage, collector-to-emitter, base open 3rd transistor
Voltage Rating In Volts Per Characteristic
80.0 breakdown voltage, collector-to-base, emitter open 1st transistor and 5.0 breakdown voltage, emitter-to-base, collector open 1st transistor and 50.0 breakdown voltage, collector-to-emitter, base open 1st transistor
Voltage Rating In Volts Per Characteristic
80.0 breakdown voltage, collector-to-base, emitter open 4th transistor and 5.0 breakdown voltage, emitter-to-base, collector open 4th transistor and 50.0 breakdown voltage, collector-to-emitter, base open 4th transistor
Current Rating Per Characteristic
3.00 amperes collector current, dc all transistor
Power Rating Per Characteristic
5.0 watts total power dissipation 1st transistor
Power Rating Per Characteristic
5.0 watts total power dissipation 4th transistor
Power Rating Per Characteristic
10.0 watts total power dissipation 2nd transistor
Power Rating Per Characteristic
10.0 watts total power dissipation 3rd transistor
Maximum Operating Tempurature Per Measurement Point
125.0 degrees celsius junction
Terminal Type And Quantity
9 pin

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77A112799P1 Cross Reference
  • 77A112799P001