Photo Semiconductor Device

Model / MPN: NTE3035A | NSN: 5961-01-342-8402

A semiconductor device (1) which is responsive to visible or infrared radiant energy. May or may not include mounting hardware and/or heat sink. Excludes semiconductor device (1), diode; semiconductor device (1), thyristor and transistor. For solid state devices which emit visible or infrared radiant energy, see light emitting diode.

Product Details

NATO Stock Number

5961-01-342-8402

Sold in multiples of

1 EA

DEMIL

DEMIL/MLI

Inclosure Material

Plastic

Overall Length

Between 0.135 inches and 0.185 inches

Terminal Length

Between 0.505 inches and 0.750 inches

Overall Height

Between 0.080 inches and 0.125 inches

Overall Width

Between 0.110 inches and 0.130 inches

Function For Which Designed

Phototransistor

End Application

6625-01-235-0428 multimeter

Mounting Method

Terminal

Semiconductor Material

Silicon

Voltage Rating In Volts Per Characteristic

60.0 breakdown voltage, collector-to-emitter, base open

Current Rating Per Characteristic

100.00 nanoamperes repetitive peak forward current peak

Power Rating Per Characteristic

150.0 milliwatts small-signal input power, common-collector absolute

Maximum Operating Tempurature Per Measurement Point

100.0 degrees celsius junction

Terminal Type And Quantity

2 uninsulated wire lead

3035A Series Parts

Pricing and Availability

Send us a request for quote using the form below. Our team will contact you with an up to date pricing and availability quote ASAP.

Certified Quality Assurance

ISO 9001:2015 + AS9120B
Counterfeit Parts Prevention
100% Product Inspections
7 Year Record Retention
On Time Delivery
HAZMAT Certified
Worldwide Shipping

NTE3035A Cross Reference

742072
3035A
MRD711