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Thyristor Semiconductor Device

Model / MPN: 1884-0009 | NSN: 5961-00-901-5422
ITAR Registered seal

A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Product Details
NATO Stock Number
5961-00-901-5422
Sold in multiples of
1 EA
DEMIL
NO
Inclosure Material
Metal
Overall Length
Between 0.240 inches and 0.260 inches
Terminal Length
1.500 inches
Overall Diameter
Between 0.335 inches and 0.370 inches
Joint Electronic Device Engineering Council/jedec/case Outline Designation
To-5
Mounting Method
Terminal
Terminal Circle Diameter
0.200 inches
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
200.0 repetitive peak reverse voltage, peak total value, gate terminal open-circuited and 300.0 nonrepetitive peak reverse voltage, peak total value, gate terminal open-circuited and 6.0 peak positive gate voltage and 6.0 peak negative gate voltage and 300.0 forward voltage, peak
Current Rating Per Characteristic
10.00 amperes source cutoff current peak and 0.10 amperes source cutoff current minor and 1.60 amperes forward current, average of standard range
Power Rating Per Characteristic
100.0 milliwatts small-signal input power, common-collector blank and 10.0 milliwatts small-signal input power, common-collector universal
Maximum Operating Tempurature Per Measurement Point
125.0 degrees celsius junction
Terminal Type And Quantity
3 uninsulated wire lead

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1884-0009 Cross Reference
  • C6G
  • 1884-0038
  • C6B
  • C6B
  • C6B