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Photo Semiconductor Device

Model / MPN: 402640-1 | NSN: 5961-00-163-5487
ITAR Registered seal

A semiconductor device (1) which is responsive to visible or infrared radiant energy. May or may not include mounting hardware and/or heat sink. Excludes semiconductor device (1), diode; semiconductor device (1), thyristor and transistor. For solid state devices which emit visible or infrared radiant energy, see light emitting diode.

Product Details
NATO Stock Number
5961-00-163-5487
Sold in multiples of
1 EA
DEMIL
NO
Inclosure Material
Plastic
Overall Length
Between 0.170 inches and 0.210 inches
Terminal Length
0.500 inches
Overall Height
Between 0.125 inches and 0.165 inches
Overall Width
Between 0.175 inches and 0.205 inches
Function For Which Designed
Phototransistor
Internal Configuration
Junction contact-darlington connected
Joint Electronic Device Engineering Council/jedec/case Outline Designation
To-98
Response Time
250.0 microseconds
Mounting Method
Terminal
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
8.0 emitter to base voltage, static, collector open and 25.0 collector to base voltage/static/emitter open and 25.0 collector to emitter voltage/static/base open
Current Rating Per Characteristic
250.00 milliamperes peak forward surge current
Power Rating Per Characteristic
200.0 milliwatts small-signal input power, common-collector preset
Maximum Operating Tempurature Per Measurement Point
100.0 degrees celsius junction
Terminal Type And Quantity
3 uninsulated wire lead
Specification Data
80131-release6060 professional/industrial association specification

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402640-1 Cross Reference
  • RELEASE6060
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