Diode Semiconductor Device

Model / MPN: 560R046H01 | NSN: 5961-01-464-7729

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device, photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Product Details

NATO Stock Number

5961-01-464-7729

Sold in multiples of

1 EA

DEMIL

Inclosure Material

Glass

Overall Length

8.900 millimeters

Terminal Length

2.550 millimeters

End Application

Rsip pple/ifscm97942

Mounting Facility Quantity

Mounting Method

Compression

Semiconductor Material

Silicon

Voltage Rating In Volts Per Characteristic

-12.0 breakdown voltage, collector-to-emitter, base open and -20.0 collector to base voltage/static/emitter open and -3.0 emitter to base voltage, static, collector open

Current Rating Per Characteristic

-50.00 milliamperes source cutoff current

Maximum Operating Tempurature Per Measurement Point

-65.0 degrees celsius case and 150.0 degrees celsius case

Terminal Type And Quantity

4 uninsulated wire lead

560R Series Parts

Pricing and Availability

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560R046H01 Cross Reference

NE88935C