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Diode Semiconductor Device

Model / MPN: 67271-1N430B | NSN: 5961-00-998-4566
ITAR Registered seal

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device, photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Product Details
NATO Stock Number
5961-00-998-4566
Sold in multiples of
1 EA
DEMIL
NO
Inclosure Material
Metal
Overall Length
Between 0.719 inches and 0.764 inches
Overall Diameter
Between 0.622 inches and 0.628 inches
Mounting Facility Quantity
1
Mounting Method
Threaded stud
Features Provided
Hermetically sealed case and mounting hardware
Overall Width Across Flats
0.750 inches
Thread Size
0.625 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
8.5 breakdown voltage, dc
Current Rating Per Characteristic
10.00 milliamperes repetitive peak forward current
Power Rating Per Characteristic
250.0 milliwatts small-signal input power, common-collector preset
Maximum Operating Tempurature Per Measurement Point
100.0 degrees celsius ambient air
Test Data Document
81349-mil-s-19500 specification (includes engineering type bulletins, brochures, etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type data on certain environmental and performance requirements and test conditions that are shown as "typical", "average", "", etc.).
Thread Series Designator
Unf
Terminal Type And Quantity
2 tab, solder lug
Specification Data
81349-mil-19500/335 government specification

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67271-1N430B Cross Reference
  • JAN1N430B
  • MILS19500-335
  • 5193746-1
  • 1N430B