Transistor

Model / MPN: MJ10006 | NSN: 5961-01-162-4613

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Product Details

NATO Stock Number

5961-01-162-4613

Sold in multiples of

1 EA

DEMIL

Inclosure Material

Metal

Overall Length

1.573 inches

Overall Height

0.300 inches

Overall Width

1.050 inches

End Application

6130-00-g98-0694

Mounting Facility Quantity

Internal Configuration

Junction contact

Joint Electronic Device Engineering Council/jedec/case Outline Designation

To-3

Electrode Internally-electrically Connected To Case

Collector

Mounting Method

Unthreaded hole

Features Provided

Hermetically sealed case

Semiconductor Material

Silicon

Voltage Rating In Volts Per Characteristic

350.0 collector to emitter voltage/static/base open and 400.0 collector to emitter voltage, dc with specified circuit between base and emitter and 450.0 emitter to base voltage, instantaneous

Current Rating Per Characteristic

10.00 amperes source cutoff current and 2.50 amperes source cutoff current

Power Rating Per Characteristic

150.0 watts small-signal input power, common-collector absolute

Maximum Operating Tempurature Per Measurement Point

200.0 degrees celsius junction

Terminal Type And Quantity

2 pin and 1 case

MJ100 Series Parts

Pricing and Availability

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Transistor

Pricing and Availability

Certified Quality Assurance

MJ10006 Cross Reference